The facility is nearly 15 years old but has been constantly updated, modified and improved. It functions much better than when it was delivered and is able to operate in the conventional GSMBE mode as well as Ultra Low Pressure CVD mode. There are a number of EPSRC funded and industrially funded projects are supported on this facility and they are described by pages linked by the navigation buttons on the left.

The background of this page is a differnetial interference contrast micrograph of a SiGe virtual substrate. The cross-hatch patter is characterisatic of the such substrate where strain of the SiGe layer is largely relaxed.

Last updated Mon, Apr 21, 2003